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Proper derivation of CH3NH3PbX3 (CH3NH3+ = methyl ammonium or MA+; X- = Cl-, Br-, I-) optical constants is a critical step toward the development of high-performance electronic and optoelectronic perovskite devices. To date, the optical dispersion regimes at, above, and below the band gap of these materials have been inconsistently characterized by omitting or under-approximating anomalous spectral features (from ultraviolet to infrared wavelengths). In this report, we present the rigorous optical dispersion data analysis of single crystal MAPbBr3 involving variable angle spectroscopic ellipsometry data appended with transmission intensity data. This approach yields a more robust derivation of MAPbBr3 optical constants (refractive index, n, and extinction coefficient, k) for both anomalous (absorptance) and normal (no absorptance) optical dispersion regimes. Using the derived optical constants for our MAPbBr3 single crystals, illustrative modeled solar cell device designs are presented in relation to non-realistic designs prepared using representative optical constants reported in the literature to date. In comparison, our derived optical dispersion data enables the modeled design of realistic planar perovskite solar cell (PSC) optical performance where the active layer (MAPbBr3) is optimized for maximum solar radiation absorption. We further demonstrate optimized modeled planar PSC designs with minimal parasitic optical absorptance in non-active PSC device layers resulting in improved performance at broad angles of incidence (approximately 0-70°). Our robust derivation of MAPbBr3 optical properties is expected to impact the optical dispersion data analysis of all perovskite analogs and expedite targeted development of, for example, solar cell, light-emitting diode, photo and X-ray/γ-ray detector, and laser system technologies. 

In this paper, we investigate the effects of operational conditions on structural, electronic and electrochemical properties on molybdenum suboxides (MoO3-δ) thin films. The films are prepared using pulsed-laser deposition by varying the deposition temperature (Ts), laser fluence (Φ), the partial oxygen pressure (PO2) and annealing temperature (Ta). We find that three classes of samples are obtained with different degrees of stoichiometric deviation without post-treatment: (i) amorphous MoO3-δ (δ < 0.05) (ii) nearly-stoichiometric samples (δ ≈ 0) and (iii) suboxides MoO3-δ (δ > 0.05). The suboxide films 0.05 ≤ δ ≤ 0.25 deposited on Au/Ti/SiO2/flexible-Si substrates with appropriate processing conditions show high electrochemical performance as an anode layer for lithium planar microbatteries. In the realm of simple synthesis, the MoO3-δ film deposited at 450 °C under oxygen pressure of 13 Pa is a mixture of α-MoO3 and Mo8O23 phases (15:85). The electrochemical test of the 0.15MoO3-0.85Mo8O23 film shows a specific capacity of 484 µAh cm−2 µm−1 after 100 cycles of charge-discharge at a constant current of 0.5 A cm−2 in the potential range 3.0-0.05 V. 

Abstract We report on the tunable and enhanced dielectric properties of tungsten (W) incorporated gallium oxide (Ga₂O₃) polycrystalline electroceramics for energy and power electronic device applications. The W‐incorporated Ga₂O₃(Ga_2−2xW_xO₃, 0.00 ≤ x ≤ 0.20; GWO) compounds were synthesized by the high‐temperature solid‐state chemical reaction method by varying the W‐content. The fundamental aspects of the dielectric properties in correlation with the crystal structure, phase, and microstructure of the GWO polycrystalline compounds has been investigated in detail. A detailed study performed ascertains the W‐induced changes in the dielectric constant, loss tangent (tanδ) and ac conductivity. It was found that the dielectric constant increases with addition of W in the system as a function of temperature (25°C‐500°C). Frequency dependence (10²‐10⁶ Hz) of the dielectric constant follows the modified Debye model with a relaxation time of ∼20 to 90 μs and a spreading factor of 0.39 to 0.65. The dielectric constant of GWO is temperature independent almost until ∼300°C, and then increases rapidly in the range of 300°C to 500°C. W‐induced enhancement in the dielectric constant of GWO is fully evident in the frequency and temperature dependent dielectric studies. The frequency and temperature dependent tanδreveals the typical behavior of relaxation loses in GWO. Small polaron hopping mechanism is evident in the frequency dependent electrical transport properties of GWO. The remarkable effect of W‐incorporation on the dielectric and electrical transport properties of Ga₂O₃is explained by a two‐layer heterogeneous model consisting of thick grains separated by very thin grain boundaries along with the formation of a Ga₂O₃‐WO₃composite was able to account for the observed temperature and frequency dependent electrical properties in GWO. The results demonstrate that the structure, electrical and dielectric properties can be tailored by tuning W‐content in the GWO compounds.